PHE13007 NXP Semiconductors, PHE13007 Datasheet - Page 2

• Manufacturer Part Number: PHE13007
• Description: Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
1 Measured with half sine-wave voltage (curve tracer).
February 1999
Silicon Diffused Power Transistor
mb
SYMBOL
I
I
I
V
V
V
V
V
V
V
h
h
mb
SYMBOL
t
t
t
t
t
t
CES
CES
EBO
s
f
s
f
s
f
FE
FEsat
CEOsust
CEsat
CEsat
CEsat
BEsat
BEsat
BEsat
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
PARAMETER
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
PARAMETER
Switching times (resistive load)
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
Turn-off storage time
Turn-off fall time
1
CONDITIONS
V
V
T
V
I
L = 25 mH
I
I
I
(T
I
I
I
(T
I
I
CONDITIONS
I
R
I
-V
I
-V
B
C
C
C
C
C
C
C
C
Con
Con
Con
j
BE
BE
EB
L
= 0 A; I
C
C
= 2.0 A;I
= 5.0 A;I
= 5.0 A;I
= 2.0 A;I
= 5.0 A;I
= 5.0 A;I
= 2.0 A; V
= 5.0 A; V
BB
BB
= 125 ˚C
= 75 ohms; V
= 100˚C)
= 100˚C)
= 5 A; I
= 5 A; I
= 5 A; I
= 0 V; V
= 0 V; V
= 9 V; I
= 5 V
= 5 V; T
2
C
B
B
B
B
B
B
= 10 mA;
Bon
Bon
Bon
C
CE
CE
= 0.4 A
= 1.0 A
= 1.0 A
= 0.4 A
= 1.0 A
= 1.0 A
CE
CE
j
= 0 A
= 100 ˚C
= -I
= 1 A; L
= 1 A; L
= V
= V
= 5 V
= 5 V
BB2
Boff
CESMmax
CESMmax
= 4 V;
= 1 A;
B
B
= 1 H;
= 1 H;
;
MIN.
400
8
5
-
-
-
-
-
-
-
-
-
TYP.
TYP.
0.15
0.35
0.51
0.92
1.05
1.00
100
1.8
0.3
1.2
1.6
17
40
9
-
-
-
-
Product specification
PHE13007
MAX.
MAX.
120
200
0.2
1.0
1.0
1.0
2.0
3.0
1.2
1.6
1.5
3.0
0.7
2.0
3.0
40
30
-
Rev 1.000
UNIT
UNIT
mA
mA
mA
ns
ns
V
V
V
V
V
V
V
s
s
s
s