BUJ105AD NXP Semiconductors, BUJ105AD Datasheet - Page 7

• Manufacturer Part Number: BUJ105AD
• Description: Buj105ad Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
7. Package information
9397 750 14196
Product data sheet
Fig 13. Collector-emitter saturation voltage as a
Fig 15. Reverse bias safe operating area
V
CEsat
(V)
0.6
0.4
0.2
0
10
I
function of collector current; typical values
T
C
j
/I
< T
1
B
= 4.
j(max)
.
Epoxy meets requirements of UL94 V-0 at
T
j
= 100 C
25 C
40 C
1
(A)
I
C
I
10
C
8
6
4
2
0
(A)
0
001aac048
Rev. 01 — 14 December 2004
10
200
400
Fig 14. Test circuit for reverse bias safe operating area
V
BB
= 5 V
600
V
V
1
1 V; L
CEclamp
3 V
1 V
CEclamp
8
I
V
001aac049
Bon
inch.
BB
B
< 700 V; V
= 1 H; L
(V)
800
Silicon diffused power transistor
C
L
CC
= 200 H.
B
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
= 150 V; V
L
V
C
CC
DUT
BUJ105AD
BB
= 5 V, 3 V and
V
probe point
CEclamp
001aab999
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