BUJ105AD NXP Semiconductors, BUJ105AD Datasheet - Page 4

• Manufacturer Part Number: BUJ105AD
• Description: Buj105ad Silicon Diffused Power Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 5:
T
[1]
9397 750 14196
Product data sheet
Symbol
Dynamic characteristics
Switching times (resistive load); see
t
t
t
Switching times (inductive load); see
t
t
Switching times (inductive load); see
t
t
on
stg
f
stg
f
stg
f
mb
Fig 3. Test circuit for collector-emitter sustaining
= 25 C; unless otherwise specified.
Measured with half sine-wave voltage (curve tracer).
30 Hz to 60 Hz
voltage
Parameter
turn-on time
storage time
fall time
storage time
fall time
storage time
fall time
Characteristics
6 V
300
…continued
100
horizontal
oscilloscope
vertical
Figure 5
1
Figure 7
Figure 7
to 200
50 V
Conditions
I
I
V
I
V
and
Con
Con
Con
and
and
BB
BB
001aab987
Rev. 01 — 14 December 2004
= 5 A; I
= 5 A; I
= 5 V
= 5 A; I
= 5 V; T
6
8
8
Bon
Bon
Bon
j
= 100 C
= I
= 1 A; L
= 1 A; L
Fig 4. Oscilloscope display for collector-emitter
Boff
250
100
10
(mA)
0
I
C
= 1 A; R
B
B
= 1 H;
= 1 H;
sustaining voltage test waveform
L
= 75
Silicon diffused power transistor
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
-
-
BUJ105AD
Typ
0.65
1.8
0.3
1.2
20
1.4
25
V
Max
1
2.5
0.5
1.7
50
1.9
100
CEOsus
min
001aab988
V
Unit
ns
ns
CE
s
s
s
s
s
4 of 12
(V)