2PD2150 NXP Semiconductors, 2PD2150 Datasheet - Page 5

• Manufacturer Part Number: 2PD2150
• Description: 20 V, 3 A Npn Low Vcesat Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
2PD2150_2
Product data sheet
Table 7.
T
[1]
Symbol
I
I
h
V
f
C
C
CBO
EBO
T
amb
FE
CEsat
ib
ob
Pulse test: t
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
transition frequency
common-base input
capacitance
common-base output
capacitance
Characteristics
p
300 s;
Rev. 02 — 2 January 2007
0.02.
Conditions
V
V
V
I
V
f = 100 MHz
V
f = 1 MHz
V
f = 1 MHz
C
CB
EB
CE
CE
EB
CB
= 2 A; I
= 30 V; I
= 5 V; I
= 2 V; I
= 2 V; I
= 5 V; I
= 10 V; I
B
= 0.1 A
C
C
E
E
E
E
20 V, 3 A NPN low V
= i
= 0 A
= 0.1 A
= 0.5 A;
= i
= 0 A
e
e
= 0 A;
= 0 A;
[1]
Min
-
-
180
-
-
-
-
CEsat
Typ
-
-
-
0.2
220
180
20
2PD2150
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
Max
0.1
0.1
390
0.5
-
-
-
Unit
V
MHz
pF
pF
5 of 13
A
A