2PD2150 NXP Semiconductors, 2PD2150 Datasheet - Page 11

• Manufacturer Part Number: 2PD2150
• Description: 20 V, 3 A Npn Low Vcesat Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
11. Revision history
Table 9.
2PD2150_2
Product data sheet
Document ID
2PD2150_2
Modifications:
2PD2150_1
Revision history
Release date
20070102
20050422
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Table 1 “Quick reference
Table 1 “Quick reference
Table 1 “Quick reference
Table 5 “Limiting
Table 5 “Limiting
Table 5 “Limiting
Table 5 “Limiting
Figure 1 “Power derating
Table 6 “Thermal
Table 6 “Thermal
ceramic PCB condition added
Figure
Figure
Table 7
Table 7
Table 7
Table 7
Figure
Figure
Section 12 “Legal
2: t
3: added
4, 6, 10, 11, 12,
5, 7,
“Characteristics”: V
“Characteristics”: f
“Characteristics”: C
“Characteristics”: C
p
pulse time redefined to pulse duration
8
and 9: adapted
Data sheet status
Product data sheet
Product data sheet
values”: V
values”: I
values”: I
values”: P
Rev. 02 — 2 January 2007
characteristics”: adapted
characteristics”: R
information”: updated
13
data”: I
data”: I
data”: V
curves”: adapted
C
CM
T
and 16: added
CEO
tot
CEsat
ib
ob
transition frequency conditions slightly changed
collector current maximum value adapted
common-base input capacitance added
peak collector current maximum value adapted
total power dissipation for ceramic PCB condition added
common-base output capacitance added
collector-emitter voltage maximum value adapted
C
CM
collector-emitter saturation voltage typical value added
CEsat
collector current added
peak collector current maximum value adapted
th(j-a)
collector-emitter saturation voltage added
thermal resistance from junction to ambient for
20 V, 3 A NPN low V
Change notice
-
-
Supersedes
2PD2150_1
-
CEsat
2PD2150
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
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