DIM400PHM17-A000 Dynex Semiconductor, DIM400PHM17-A000 Datasheet - Page 5

• Manufacturer Part Number: DIM400PHM17-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

ELECTRICAL CHARACTERISTICS
T
T
Symbol
Symbol
case
case
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
E
E
E
E
t
t
t
t
E
d(off)
d(on)
d(off)
d(on)
E
Q
Q
Q
I
REC
I
REC
OFF
OFF
t
t
t
t
= 25°C unless stated otherwise.
= 125° C unless stated otherwise.
ON
rr
rr
f
r
O
f
r
g
rr
rr
SEMICONDUCTOR
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Parameter
Parameter
R
R
I
I
F
G(ON)
F
G(ON)
= 400A, V
dl
= 400A, V
dl
Test Conditions
Test Conditions
F
F
/dt = 3000A/µs
/dt = 2500A/µs
V
V
V
V
L
L
= R
I
= R
I
C
GE
CE
C
GE
CE
= 400A
= 400A
= ±15V
= 900V
100nH
= ±15V
= 900V
100nH
G(OFF)
G(OFF)
R
R
= 900V,
= 900V,
= 4.7
= 4.7
Min.
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1150
1400
Typ.
Typ.
100
120
250
250
150
100
230
130
180
400
250
170
170
270
100
4.5
70
DIM400PHM17-A000
Max.
Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
/
9
Units
Units
mJ
mJ
µC
µC
mJ
mJ
mJ
µC
mJ
ns
ns
ns
ns
ns
ns
ns
ns
A
A