DIM400PHM17-A000 Dynex Semiconductor, DIM400PHM17-A000 Datasheet - Page 2

• Manufacturer Part Number: DIM400PHM17-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° C unless stated otherwise
Symbol
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
V
V
I
P
V
Q
C(PK)
I
GES
I
CES
max
2
isol
C
PD
t
SEMICONDUCTOR
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I
Isolation voltage – per module
Partial discharge – per module
2
t value (IGBT arm)
Parameter
V
T
1ms, T
T
V
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
case
case
GE
R
= 0, t
= 0V
= 75° C
= 25° C, T
case
P
= 10ms, T
=110° C
1
= 3500V, V
j
= 150° C
vj
Test Conditions
= 125° C
2
= 2600V, 50Hz RMS
DIM400PHM17-A000
Max.
1700
3470
6000
±20
400
800
30
10
2
/
9
Units
kA
pC
W
V
V
A
A
V
2
S