DIM400PHM17-A000 Dynex Semiconductor, DIM400PHM17-A000 Datasheet - Page 4

• Manufacturer Part Number: DIM400PHM17-A000
• Description: Half Bridge Igbt Module
• Manufacturer: Dynex Semiconductor

Symbol
ELECTRICAL CHARACTERISTICS
T
Note:
+ Measured at the auxiliary terminals
* L is the circuit inductance + L
V
V
SC
case
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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CE(sat)
R
GE(TH)
C
I
I
I
V
L
ces
ces
I
FM
INT
F
ies
F
M
Data
= 25°C unless stated otherwise.
SEMICONDUCTOR
+
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
Diode maximum forward current
Diode forward voltage
Input capacitance
Module inductance- per arm
Internal resistance- per arm
Short circuit. I
Parameter
sc
M
V
V
V
I
V
V
DC
t
I
I
V
T
t
V
IEC 60747-9
C
p
F
F
p
j
GE
GE
GE
GE
GE
CE
CE(max)
= 1ms
= 400A
= 400A, T
= 125° C, V
= 16mA, V
10µs,
= 25V, V
= 0V, V
= 0V, V
= ±20V, V
= 15V, I
= 15V, I
= V
Test Conditions
CES
CE
CE
case
C
C
GE
GE
cc
= 400A
= 400A, T
CE
= V
= V
- L*.di/dt
= 1000V,
= V
= 0V, f = 1MHz
= 125° C
= 0V
CES
CES
-
-
CE
, T
case
case
= 125° C
= 125° C
I
I
1
2
Min.
4.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1850
1600
Typ.
0.27
5.5
2.7
3.4
2.2
2.3
30
20
DIM400PHM17-A000
-
-
-
-
-
Max.
400
800
6.5
3.2
4.0
2.5
2.6
12
1
2
-
-
-
-
-
4
/
9
Units
mA
mA
m
nH
nA
nF
V
V
V
A
A
V
V
A
A