FMA18N25G Fuji Electric holdings CO.,Ltd, FMA18N25G Datasheet - Page 7
FMA18N25G
Manufacturer Part Number
FMA18N25G
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.FMA18N25G.pdf
(19 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Failure Criteria
Fuji Electric Device Technology Co.,Ltd.
Test
No.
Breakdown Voltage
Zero gate Voltage Drain-Source Current
Gate-Source Leak age Current
Gate Threshold Voltage
Drain-Sourc e on-state Res istanc e
Forward Transc onduc tance
Diode forward on-Voltage
Marking
Soldering
and other damages
* LSL : Lower Specification Limit
* Before any of elec trical characteristic s meas ure, all tes ting related to the humidity
have c onduc ted after dry ing the package surface for more than an hour at 150°C.
10 HTRB
1 High Temp.
2 Low Temp.
3 Temperature
4 Temperature
5 Unsaturated
6 Temperature
7 Thermal Shock
8 Intermittent
9 HTRB
Test
Items
Storage
Storage
Humidity
Storage
Humidity
BIAS
Pressurized
Vapor
Cycle
Operating
Life
(Gate-source)
(Drain-Source)
Item
Testing methods and Conditions
Temperature : 150+0/-5°C
Test duration : 1000hr
Temperature : -55+ 5/-0°C
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : V
Test duration : 1000hr
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 48hr
High temp.side : 150 5 C/30min.
Low temp.side : -55 5 C/30min.
RT : 5°C ∼ 35°C/5min.
Number of cycles : 100cycles
Fluid : pure water(running water)
High temp.side : 100+0/-5 C
Low temp.side : 0+5/-0 C
Duration time : HT 5min,LT 5min
Number of cycles : 100cycles
Tc=90degree
Tch Tch(max.)
Test duration : 3000 cycle
Temperature : Tch=150+0/-5°C
Bias Voltage : +V
Test duration : 1000hr
Temperature : Tch=150+0/-5°C
Bias Voltage : V
Test duration : 1000hr
DS
DS
GS
(max) * 0.8
(max)
(max)
Symbols
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
VSD
* USL : Upper Specification Limit
-----
W ith eyes or Microsc ope
MS5F06392
Reference
Standard
EIAJ
ED4701/200
method 201
EIAJ
ED4701/200
method 202
EIAJ
ED4701/100
method 103
EIAJ
ED4701/100
method 103
EIAJ
ED4701/100
method 103
EIAJ
ED4701/100
method 105
EIAJ
ED4701/300
method 307
EIAJ
ED4701/100
method 106
EIAJ
ED4701/100
method 101
EIAJ
ED4701/100
method 101
Lower Limit
LSL
LSL
LSL
-----
-----
-----
-----
Failure Criteria
Sampling
number
Upper Limit
USL
USL
USL
USL
USL
-----
-----
22
22
22
22
22
22
22
22
22
22
7 / 19
Acceptance
number
H04-004-03
(0:1)
(0:1)
Unit
-----
V
A
A
V
S
V