FMA18N25G Fuji Electric holdings CO.,Ltd, FMA18N25G Datasheet - Page 3

• Manufacturer Part Number: FMA18N25G
• Description: N-channel Silicon Power Mosfet
• Manufacturer: Fuji Electric holdings CO.,Ltd

1.Scope
2.Construction
3.Applications
4.Outview
5.Absolute Maximum Ratings at Tc=25  C (unless otherwise specified)
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Non-repetitive
Maximum Avalanche Current
Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Maximum Power Dissipation
Operating and Storage
Temperature range
Isolation Voltage
6.Electrical Characteristics at Tc=25  C (unless otherwise specified)
Static Ratings
Drain-Source
Gate Threshold
Zero Gate Voltage
Gate-Source
Drain-Source
Fuji Electric Device Technology Co.,Ltd.
Drain-Source Voltage
On-State Resistance R
Breakdown Voltage BV
Description
Leakage Current I
Drain Current I
Description
Voltage V
This specifies Fuji Power MOSFET FMA18N25G
N-Channel enhancement mode power MOSFET
for Switching
TO-220F
DSS
GSS
Symbol
GS
DS
DSS
(th)
(on)
V
V
I
I
V
I
I
E
E
dV
dV/dt
P
T
T
V
I
V
I
V
V
V
V
V
V
V
I
V
D
DP
AS
AR
D
D
D
Outview See to 8/18 page
ch
stg
DS
DSX
GS
AS
AR
D
ISO
GS
DS
DS
GS
DS
GS
GS
DS
GS
=250 A
=250 A
=9.0A
Symbol
DS
=V
=250V
=200V
=0V
=0V
=0V
=0V
= ± 30V
=10V
/dt
Conditions
GS
T
T
ch
ch
=25°C
=125°C
Characteristics
-55 to +150
349.5
2.16
18.0
18.0
18.0
250
250
150
4.8
48
20
± 72.0
± 30
5
2
min.
250
3.0
MS5F06392
-
-
-
-
kVrms
kV/ s
kV/ s
0.15
Unit
typ.
mJ
mJ
 C
 C
W
V
V
A
A
V
A
A
-
-
-
-
-
VGS=-30V
Note *1
Note *2
Note *3
VDS 250V
Note *4
Tc=25°C
Ta=25°C
t=60sec
f=60Hz
max.
0.19
250
100
5.0
25
-
Remarks
3 / 19
Unit
H04-004-03
 A
nA

V
V