PBSS2515VS NXP Semiconductors, PBSS2515VS Datasheet - Page 4

• Manufacturer Part Number: PBSS2515VS
• Description: 15 V Low Vcesat Npn Double Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Dec 23
Per transistor unless otherwise specified
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BEsat
BE
CEsat
c
15 V low V
= 25 C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
CE(sat)
300 s;
PARAMETER
NPN double transistor
0.02.
V
V
V
V
V
V
I
I
I
I
I
V
I
V
C
C
C
C
C
C
CB
CB
EB
CE
CE
CE
CE
CB
= 10 mA; I
= 200 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 100 mA; V
= 15 V; I
= 15 V; I
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
CONDITIONS
C
C
C
C
C
4
E
E
B
E
= 0 A
= 10 mA
= 100 mA; note 1
= 500 mA; note 1
= 100 mA; note 1
B
B
B
B
= 0 A
= 0 A; T
= 0.5 mA
= I
CE
= 10 mA
= 50 mA; note 1
= 50 mA; note 1
= 50 mA; note 1
e
= 5 V; f = 100 MHz 250
= 0 A; f = 1 MHz
j
= 150 C
200
150
90
MIN.
300
420
4.4
PBSS2515VS
TYP.
Product specification
100
50
100
25
150
250
<500
1.1
0.9
6
MAX.
nA
nA
mV
mV
mV
m
V
V
MHz
pF
UNIT
A