PBSS2515VS NXP Semiconductors, PBSS2515VS Datasheet - Page 2

• Manufacturer Part Number: PBSS2515VS
• Description: 15 V Low Vcesat Npn Double Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
NPN low V
package.
PNP complement: PBSS3515VS.
MARKING
ORDERING INFORMATION
2004 Dec 23
PBSS2515VS
PBSS2515VS
TYPE NUMBER
300 mW total power dissipation
Very small 1.6
Excellent coplanarity due to straight leads
Low collector-emitter saturation voltage
High current capability
Improved thermal behaviour due to flat lead
Replaces two SC-75/SC-89 packaged low V
transistors on same PCB area
Reduces required PCB area
Reduced pick and place costs.
General purpose switching and muting
Low frequency driver circuits
LCD backlighting
Audio frequency general purpose amplifier applications
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
15 V low V
TYPE NUMBER
CEsat
double transistor in a SOT666 plastic
1.2 mm ultra thin package
CE(sat)
NAME
NPN double transistor
MARKING CODE
plastic surface mounted package; 6 leads
N9
CEsat
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
DESCRIPTION
V
I
R
SYMBOL
CM
CEO
CEsat
PACKAGE
Fig.1
PIN
1, 4
2, 5
6, 3
Top view
Simplified outline (SOT666) and symbol.
1
6
collector-emitter voltage
peak collector current
equivalent on-resistance
emitter
base
collector
5
2
PARAMETER
3
4
TR1; TR2
TR1; TR2
TR1; TR2
DESCRIPTION
MAM447
PBSS2515VS
Product specification
TR1
6
1
15
1
<500
MAX.
5
2
VERSION
SOT666
4
3
TR2
V
A
m
UNIT