NESG2107M33 Renesas Electronics Corporation., NESG2107M33 Datasheet - Page 5

• Manufacturer Part Number: NESG2107M33
• Description: Npn Sige Rf Transistor For High Frequency, Low Noise, High-gain Amplification
• Manufacturer: Renesas Electronics Corporation.

Remark The graphs indicate nominal characteristics.
35
30
25
20
15
10
25
20
15
10
20
15
10
5
0
5
0
5
0
0.1
INSERTION POWER GAIN, MAG, MSG
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
1
1
V
f = 1 GHz
V
f = 2 GHz
CE
CE
= 1 V
= 1 V
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
|S
Collector Current I
Collector Current I
|S
21e
21e
Frequency f (GHz)
MSG
1
|
|
2
2
10
10
MSG
MAG
|S
21e
MAG
|
2
C
C
10
(mA)
(mA)
MSG
MSG
Data Sheet PU10421EJ03V0DS
MAG
V
I
C
CE
= 5 mA
= 2 V
MAG
100
100
100
35
30
25
20
15
10
25
20
15
10
20
15
10
5
0
5
0
5
0
0.1
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
1
1
V
f = 1 GHz
V
f = 2 GHz
CE
CE
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
= 2 V
= 2 V
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Collector Current I
Collector Current I
|S
MSG
Frequency f (GHz)
21e
1
|
2
10
10
NESG2107M33
MAG
|S
|S
MAG
MSG
MSG
21e
21e
|
|
2
2
C
C
10
(mA)
(mA)
MSG
V
I
C
MAG
CE
= 20 mA
= 2 V
5
100
100
100