NESG2107M33 Renesas Electronics Corporation., NESG2107M33 Datasheet

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NESG2107M33

Manufacturer Part Number
NESG2107M33
Description
Npn Sige Rf Transistor For High Frequency, Low Noise, High-gain Amplification
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. PU10421EJ03V0DS (3rd edition)
Date Published May 2008 NS
Printed in Japan
FEATURES
• The device is an ideal choice for OSC, low noise, high-gain amplification
• SiGe technology adopted
• 3-pin super lead-less minimold (M33, 0804 PKG) package
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG2107M33
NESG2107M33-T3
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
Part Number
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION
Unit sample quantity is 50 pcs.
Parameter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG)
NESG2107M33-A
NESG2107M33-T3-A
Part Number
2
× 1.0 mm (t) glass epoxy PCB
NPN SiGe RF TRANSISTOR FOR
Symbol
NPN SILICON GERMANIUM RF TRANSISTOR
P
V
V
V
T
tot
CBO
CEO
EBO
I
T
C
stg
The mark <R> shows major revised points.
Note
j
3-pin super lead-less
minimold (M33, 0804
PKG) (Pb-Free)
A
= +25°C)
Package
DATA SHEET
−65 to +150
Ratings
13.0
100
130
150
5.0
1.5
50 pcs (Non reel)
10 kpcs/reel
Quantity
NESG2107M33
Unit
mW
mA
°C
°C
V
V
V
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side
of the tape
Supplying Form
2003, 2008

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NESG2107M33 Summary of contents

Page 1

... Date Published May 2008 NS Printed in Japan The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 Package Quantity 3-pin super lead-less 50 pcs (Non reel) ...

Page 2

... Sopt L Lopt Note mA MHz μ s, Duty Cycle ≤ 2% Data Sheet PU10421EJ03V0DS NESG2107M33 MIN. TYP. MAX. Unit − − 100 nA − − 100 nA − 140 180 220 − GHz − − ...

Page 3

... BE μ μ 320 A μ 240 A μ 160 A μ (V) CE Data Sheet PU10421EJ03V0DS NESG2107M33 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE MHz Collector to Base Voltage V (V) CB COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 0.4 0.5 0.6 0.7 0.8 0.9 Base to Emitter Voltage V ...

Page 4

... MSG 100 0.1 Data Sheet PU10421EJ03V0DS NESG2107M33 DC CURRENT GAIN vs. COLLECTOR CURRENT 100 Collector Current I (mA 100 Collector Current I (mA) C INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY ...

Page 5

... INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz MAG 100 1 (mA) Data Sheet PU10421EJ03V0DS NESG2107M33 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG MAG MSG 21e 1 10 100 Frequency f (GHz) ...

Page 6

... MAG 21e 0 – Collector Current I Remark The graphs indicate nominal characteristics. 6 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz MSG –5 100 1 (mA) C Data Sheet PU10421EJ03V0DS NESG2107M33 = MAG 21e 10 100 Collector Current I (mA) C ...

Page 7

... S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.necel.com/microwave/en/ Data Sheet PU10421EJ03V0DS NESG2107M33 7 ...

Page 8

... PACKAGE DIMENSIONS 3-PIN SUPER LEAD-LESS MINIMOLD (M33, 0804 PKG) (UNIT: mm) PIN CONNECTIONS 8 0.64±0.05 (Bottom View) 0.44±0. 0.15 1. Emitter 2. Base 3. Collector Data Sheet PU10421EJ03V0DS NESG2107M33 ...

Page 9

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). NESG2107M33 Not all M8E 02. 11-1 ...

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