NESG2107M33 Renesas Electronics Corporation., NESG2107M33 Datasheet - Page 2

• Manufacturer Part Number: NESG2107M33
• Description: Npn Sige Rf Transistor For High Frequency, Low Noise, High-gain Amplification
• Manufacturer: Renesas Electronics Corporation.

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ELECTRICAL CHARACTERISTICS (T
h
2
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Associated Gain
Reverse Transfer Capacitance
FE
Notes 1. Pulse measurement: PW ≤ 350
h
Marking
CLASSIFICATION
FE
Rank
Value
2. Collector to base capacitance when the emitter grounded
Parameter
140 to 220
FB
D7
Symbol
⏐S
⏐S
h
C
FE
I
I
re
NF
G
CBO
EBO
f
f
21e
21e
Note 1
T
T
Note 2
a
⏐
⏐
2
2
μ
A
V
V
V
V
V
V
V
V
Z
V
Z
V
s, Duty Cycle ≤ 2%
Data Sheet PU10421EJ03V0DS
= +25°C)
S
S
CB
EB
CE
CE
CE
CE
CE
CE
CE
CB
= Z
= Z
= 5 V, I
= 0.5 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
= 1 V, I
Sopt
Sopt
, Z
, Z
E
C
C
C
C
C
C
C
E
Test Conditions
L
L
= 0 mA
= 0 mA, f = 1 MHz
C
= 5 mA
= 5 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 5 mA, f = 2 GHz
= 20 mA, f = 2 GHz
= 5 mA, f = 2 GHz,
= 5 mA, f = 2 GHz,
= Z
= Z
= 0 mA
Lopt
Lopt
MIN.
140
7.5
−
−
7
−
−
−
7
−
TYP.
180
0.9
0.5
10
20
10
10
−
−
9
NESG2107M33
MAX.
100
100
220
1.5
0.7
−
−
−
−
−
GHz
GHz
Unit
nA
nA
dB
dB
dB
dB
pF
−