ATF-21186 Avago Technologies, ATF-21186 Datasheet - Page 2

• Manufacturer Part Number: ATF-21186
• Description: 0.5-6 Ghz General Purpose Gallium Arsenide Fet - Agilent Hewlett-packard
• Manufacturer: Avago Technologies

ATF-21186 Absolute Maximum Ratings
ATF-21186 Electrical Specifications, T
Symbol
Symbol
T
V
T
G
V
V
Thermal Resistance
P
I
NF
P
I
STG
DS
G
g
DS
GS
GD
CH
V
DSS
1 dB
1 dB
T
m
P
A
o
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature
Optimum Noise Figure
V
Associated Gain
V
Power at 1 dB Gain Compression
V
1 dB Compressed Gain
V
Transconductance
Saturated Drain Current
Pinchoff Voltage
DS
DS
DS
DS
Parameter
= 2 V, I
= 2 V, I
= 3 V, I
= 3 V, I
[2]
Parameters and Test Conditions
:
DS
DS
DS
DS
= 15 mA
= 15 mA
= 70 mA
= 70 mA
jc
[2,3]
= 225 C/W
Units
mW
mA
V
V
V
C
C
V
Absolute Maximum
V
V
DS
DS
DS
A
= 3 V, I
5-50
= 25 C
= 3 V, V
= 3 V, V
-65 to +150
I
400
150
DSS
-4
-6
DS
5
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
f = 1 GHz
f = 2 GHz
f = 4 GHz
GS
GS
= 1 mA
= 0 V
= 0 V
[1]
Units
dBm
mA
mS
dB
dB
dB
V
Notes:
1. Operation of this device above any
2. T
3. Derate at 4.4 mW/
one of these parameters may cause
permanent damage.
be the temperature at the ends of
pins 2 and 4 where they contact the
circuit board).
CASE
Min.
= 25
12.0
-3.0
70
80
o
C (T
CASE
o
C for T
Typ.
14.2
12.6
19.0
19.0
18.0
18.0
14.0
120
120
-1.5
0.4
0.5
0.6
9.1
8.5
is defined to
Cּ
>ּ 60
Max.
0.75
200
-0.8
o
C.