ATF-36077-TR1 Avago Technologies US Inc., ATF-36077-TR1 Datasheet
ATF-36077-TR1
Manufacturer Part Number
ATF-36077-TR1
Description
IC PHEMT 2-18GHZ ULT LN 77-SMD
Manufacturer
Avago Technologies US Inc.
Datasheet
1.ATF-36077-TR1.pdf
(4 pages)
Specifications of ATF-36077-TR1
Transistor Type
pHEMT FET
Frequency
12GHz
Gain
12dB
Voltage - Rated
3V
Current Rating
45mA
Noise Figure
0.5dB
Current - Test
10mA
Voltage - Test
1.5V
Power - Output
5dBm
Package / Case
4-SMD (77 Pack)
Power Dissipation Pd
180mW
No. Of Pins
4
Configuration
Single Dual Source
Gate-source Voltage (max)
3V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATF-36077-TR1
Manufacturer:
AVAGO
Quantity:
729
Part Number:
ATF-36077-TR1
Manufacturer:
AVAGO/安华高
Quantity:
20 000
ATF-36077
2–18 GHz Ultra Low Noise Pseudomorphic HEMT
Data Sheet
Description
Avago Technologies' ATF-36077 is an ultra-low-noise Pseudo-
morphic High Electron Mobility Transistor (PHEMT), pack-
aged in a low parasitic, surface-mountable ceramic package.
Properly matched, this transistor will provide typical 12
GHz noise figures of 0.5 dB, or typical 4 GHz noise figures
of 0.3 dB. Additionally, the ATF-36077 has very low noise
resistance, reducing the sensitivity of noise performance to
variations in input impedance match, making the design of
broadband low noise amplifiers much easier. The premium
sensitivity of the ATF-36077 makes this device the ideal
choice for use in the first stage of extremely low noise
cascades. The repeatable performance and consistency
make it appropriate for use in Ku-band Direct Broad-cast
Satellite (DBS) Television systems, C-band Television Receive
Only (TVRO) LNAs, or other low noise amplifiers operating
in the 2-18 GHz frequency range.
77 Package
Pin Configuration
GATE
1
4
2
SOURCE
SOURCE
DRAIN
3
Figure 1. ATF-36077 Optimum Noise Figure and Associated
Gain vs. Frequency for V
Features
• PHEMT Technology
• Ultra-Low Noise Figure:
• High Associated Gain:
• Low Parasitic Ceramic Microstrip Package
• Tape-and-Reel Packing Option Available
Applications
• 12 GHz DBS LNB (Low Noise Block)
• 4 GHz TVRO LNB (Low Noise Block)
• Ultra-Sensitive Low Noise Amplifiers
This GaAs PHEMT device has a nominal 0.2 micron gate
length with a total gate periphery (width) of 200 microns.
Proven gold based metalization systems and nitride pas-
sivation assure rugged, reliable devices.
Note: 1. See Noise Parameter Table.
0.5 dB Typical at 12 GHz
0.3 dB Typical at 4 GHz
12 dB Typical at 12 GHz
17 dB Typical at 4 GHz
1.2
0.8
0.4
0
0
4
FREQUENCY (GHz)
ATF-36077 fig 1
DS
8
= 1.5 V, I
NF
[1]
12
D
Ga
= 10 mA.
16
20
25
20
15
10
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ATF-36077-TR1 Summary of contents
Page 1
... Properly matched, this transistor will provide typical 12 GHz noise figures of 0.5 dB, or typical 4 GHz noise figures of 0.3 dB. Additionally, the ATF-36077 has very low noise resistance, reducing the sensitivity of noise performance to variations in input impedance match, making the design of broadband low noise amplifiers much easier ...
Page 2
... ATF-36077 Absolute Maximum Ratings Symbol Parameter V Drain – Source Voltage DS V Gate – Source Voltage GS V Gate-Drain Voltage GD I Drain Current D P Total Power Dissipation Input Power in max T Channel Temperature ch T Storage Temperature STG ATF-36077 Electrical Specifications 25° Ω 1 Symbol Parameters and Test Conditions ...
Page 3
... ATF-36077 Typical “Off ” Scattering Parameters, Common Source Ω 1 Freq GHz Mag. Ang. 11.0 0.96 -139 12.0 0.95 -152 13.0 0.94 -166 ...
Page 4
... ATF-36077 Typical Noise Parameters, Common Source Ω 1 Freq. F [1] min GHz dB 1 0.30 2 0.30 4 0.30 6 0.30 8 0.37 10 0.44 12 0.50 14 0.56 16 0.61 18 0.65 Note: 1. The F values at 2,4, and 6 GHz have been adjusted to reflect expected circuit losses that min will be encountered when matching to the optimum reflection coefficient (Γ ...