BF997 NXP Semiconductors, BF997 Datasheet - Page 4

• Manufacturer Part Number: BF997
• Description: N-channel Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

DYNAMIC CHARACTERISTICS
Measuring conditions (common source): I
Philips Semiconductors
STATIC CHARACTERISTICS
T
April 1991
I
I
V
V
V
V
I
C
C
C
C
F
G
SYMBOL
SYMBOL
j
G1-SS
G2-SS
DSS
Y
= 25 C unless otherwise specified.
(BR)G1-SS
(BR)G2-SS
(P)G1-S
(P)G2-S
ig1-s
ig2-s
rs
os
N-channel dual-gate MOS-FET
p
fs
gate 1 cut-off current
gate 2 cut-off current
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source cut-off voltage
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
feedback capacitance
output capacitance
noise figure
power gain
PARAMETER
PARAMETER
D
= 10 mA; V
V
V
I
I
I
I
V
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 200 MHz; G
f = 200 MHz; G
G
G1-SS
G2-SS
D
D
G1-S
G2-S
DS
L
= 20 A; V
= 20 A; V
= 0.5 mS; B
= 15 V; V
DS
= 5 V; V
= 5 V; V
= 10 mA; V
= 10 mA; V
= 15 V; V
4
DS
DS
CONDITIONS
CONDITIONS
G2-S
S
S
L
G2-S
G1-S
= 15 V; V
= 15 V; V
= B
G2-S
= 2 mS; B
= 2 mS; B
= 4 V; V
G2-S
G1-S
= V
= V
Lopt
= 4 V; T
DS
DS
= V
= V
G2-S
G1-S
= 0
= 0
G1-S
DS
DS
S
S
= B
= B
amb
= 0
= 0
= 4 V
= 0
= 0
Sopt
Sopt
= 25 C.
;
2
15
6
6
MIN.
MIN.
Product specification
20
18
2.5
1.2
25
1
1
25
MAX.
50
50
20
20
2.5
2
TYP.
BF997
nA
nA
V
V
V
V
mA
mS
pF
pF
fF
pF
dB
dB
UNIT
UNIT