BF997 NXP Semiconductors, BF997 Datasheet - Page 3

• Manufacturer Part Number: BF997
• Description: N-channel Dual-gate Mos-fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In according with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and the Thermal characteristics
1. Device mounted on a ceramic substrate of 8
April 1991
handbook, halfpage
V
I
I
I
I
P
T
T
R
SYMBOL
SYMBOL
D
D(AV)
G1-S
G2-S
stg
j
DS
tot
th j-a
N-channel dual-gate MOS-FET
(mW)
P tot
200
100
0
0
drain-source voltage
drain current (DC)
average drain current
gate 1-source current
gate 2-source current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to ambient
Fig.2 Power derating curve.
PARAMETER
PARAMETER
100
T amb ( C)
MGE792
200
10
0.7 mm.
up to T
in free air; note 1
3
CONDITIONS
CONDITIONS
amb
= 60 C; note 1
65
MIN.
VALUE
460
Product specification
20
30
30
200
+150
150
10
10
MAX.
BF997
UNIT
K/W
V
mA
mA
mA
mA
mW
C
C
UNIT