NTF3055L108 ON Semiconductor, NTF3055L108 Datasheet - Page 4

• Manufacturer Part Number: NTF3055L108
• Description: Power Mosfet 3.0 A, 60 V, Logic Level, Nchannel Sot223
• Manufacturer: ON Semiconductor

1000
1000
0.01
800
600
400
200
100
100
0.1
10
10
0
1
1
10
1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
0.1
C
C
V
SINGLE PULSE
T
V
I
V
Figure 9. Resistive Switching Time Variation
D
C
V
GS
iss
rss
Figure 11. Maximum Rated Forward Biased
DS
GS
= 3 A
DS
= 25°C
V
= 15 V
DS
= 30 V
= 5 V
t
d(off)
= 0 V
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
V
t
f
THERMAL LIMIT
PACKAGE LIMIT
GS
R
R
DS(on)
0
G
vs. Gate Resistance
Safe Operating Area
, GATE RESISTANCE (W)
1
V
V
dc
DS
GS
LIMIT
= 0 V
5
(VOLTS)
1 ms
10
t
10 ms
r
t
d(on)
10
C
C
C
100 ms
oss
iss
rss
10
15
T
J
= 25°C
20
http://onsemi.com
NTF3055L108
100
100
25
4
3.2
2.8
2.4
1.6
1.2
0.8
0.4
80
70
60
50
40
30
20
10
0.54
6
5
4
3
2
1
0
2
0
0
0
25
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Avalanche Energy vs.
J
Drain−to−Source Voltage vs. Total Charge
GS
Q
0.58
T
V
= 25°C
J
1
SD
1
, STARTING JUNCTION TEMPERATURE (°C)
= 0 V
50
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
Figure 8. Gate−to−Source and
0.62
Q
2
g
, TOTAL GATE CHARGE (nC)
0.66
75
3
Q
2
0.7
Q
100
T
4
0.74 0.78
5
125
V
6
0.82
GS
I
T
I
D
D
150
J
= 7 A
= 3 A
= 25°C
0.86
7
0.9
175
8