NTF3055-160T1 ON Semiconductor, NTF3055-160T1 Datasheet
NTF3055-160T1
Specifications of NTF3055-160T1
Related parts for NTF3055-160T1
NTF3055-160T1 Summary of contents
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... CASE 318E LWW STYLE 3 5160 = Device Code L = Location Code WW = Work Week PIN ASSIGNMENT ORDERING INFORMATION Package Shipping SOT–223 1000 Tape & Reel SOT–223 4000 Tape & Reel SOT–223 4000 Tape & Reel Publication Order Number: NTF3055–160/D ...
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... Gate Charge SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage Reverse Recovery Time Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 s, Duty Cycle 4. Switching characteristics are independent of operating junction temperatures. NTF3055–160 ( unless otherwise noted) Symbol V (BR)DSS I DSS 20 Vdc Vdc) I GSS V GS(th) ...
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... V GS, GATE–TO–SOURCE VOLTAGE (VOLTS 1.8 1.6 1.4 1.2 1 0.8 0.6 –50 – 100 JUNCTION TEMPERATURE ( C) Figure 5. On–Resistance Variation with Temperature NTF3055–160 2 5.5 V 2 1 100 C 0 2.4 2.8 3 3.4 3.8 V GS, GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 2 ...
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... Gate Resistance 100 SINGLE PULSE 0 100 s 0.01 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.001 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area NTF3055–160 Drain–to–Source Voltage versus Total Charge 1.6 1.2 0.8 0.4 ...
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... D = 0.5 0.2 10 0.1 0.05 1 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 NTF3055–160 0.01 0 TIME (s) Figure 13. Thermal Response http://onsemi.com 5 10 100 1000 ...
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... NTF3055–160 PACKAGE DIMENSIONS SOT–223 (TO–261) CASE 318E–04 ISSUE http://onsemi.com ...
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... Notes NTF3055–160 http://onsemi.com 7 ...
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... NTF3055–160 JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTF3055–160/D ...