TK6A53D TOSHIBA Semiconductor CORPORATION, TK6A53D Datasheet - Page 3

• Manufacturer Part Number: TK6A53D
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type ?-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
10
5
4
3
2
1
0
8
6
4
2
0
1
0.1
0
0
Common source
Tc = 25°C
Pulse Test
Common source
V DS = 20 V
Pulse Test
Common source
V DS = 10 V
Pulse Test
Drain-source voltage V DS
Gate-source voltage V GS
2
2
Drain current I D (A)
Tc = −55 °C
1
4
4
I
I
|Y
D
D
10
fs
– V
– V
100
| – I
25
DS
GS
100
D
6
6
8
25
10
Tc = −55 °C
V GS = 5 V
(V)
(V)
8
8
6.25
5.5
6.5
6
7
100
10
10
3
0.1
10
20
16
12
10
1
8
6
4
2
0
8
4
0
0.1
0
0
Common source
V GS = 10 V
Tc = 25°C
Pulse Test
Drain-source voltage V DS
Gate-source voltage V GS
10
4
10
1.5
Drain current I D (A)
1
R
V GS = 10 V
V
20
DS (ON)
8
I
DS
D
– V
– V
DS
GS
– I
30
12
7.75
D
8
3
10
ID = 6 A
Common source
Tc = 25°C
Pulse Test
Common source
Tc = 25°C
Pulse Test
V GS = 5.5 V
(V)
(V)
40
16
7.25
6.5
7
6
2009-06-08
TK6A53D
100
50
20