TK6A53D TOSHIBA Semiconductor CORPORATION, TK6A53D Datasheet

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TK6A53D

Manufacturer Part Number
TK6A53D
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type ?-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
Characteristics
= 90 V, T
DC
Pulse (t = 1 ms)
ch
DSS
th
= 25°C(initial), L = 7.02 mH, R
= 2.4 to 4.4 V (V
(Note 1)
(Note 1)
(Note 2)
= 10 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
fs
E
E
T
I
I
T
P
GSS
DSS
I
DP
AR
TK6A53D
| = 2.5 S (typ.)
AS
AR
stg
D
ch
R
R
D
Symbol
DS
th (ch-a)
th (ch-c)
= 1.1 Ω (typ.)
DS
= 10 V, I
= 525 V)
−55 to 150
Rating
525
±30
147
150
D
3.5
24
35
6
6
1
G
= 1 mA)
Max
3.57
62.5
= 25 Ω, I
AR
Unit
mJ
mJ
°C
°C
°C/W
°C/W
W
V
V
A
A
Unit
= 6 A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
Ф0.2
Ф3.2 ± 0.2
1.14 ± 0.15
0.69 ± 0.15
M
2.54
A
1: Gate
2: Drain
3: Source
1
1 2 3
10 ± 0.3
2-10U1B
SC-67
2.54
2009-06-08
TK6A53D
A
Unit: mm
2
3
2.7 ± 0.2

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TK6A53D Summary of contents

Page 1

... AR T 150 °C ch −55 to 150 T °C stg Symbol Max Unit R 3.57 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω TK6A53D Unit: mm 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2 A 1.14 ± 0.15 0.69 ± 0. Ф0.2 2.54 2. Gate 2: Drain 3: Source ⎯ JEDEC JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ ...

Page 2

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 TK6A53D Min Typ. Max ⎯ ⎯ ...

Page 3

... Drain-source voltage Gate-source voltage Common source 25°C Pulse Test 1 0.1 100 0.1 3 TK6A53D I – Common source 25°C Pulse Test 7.75 7. (V) V – Common source Tc = 25°C ...

Page 4

... C rss Common source 1mA Pulse Test 0 −80 −40 100 500 V DS 400 300 200 100 0 160 0 4 TK6A53D − −0.3 −0.6 −0.9 −1.2 −1.5 Drain-source voltage V DS (V) − ...

Page 5

... Pulse width t (s) w 200 160 100 μs * 120 Channel temperature (initial) T 1000 15 V −15 V Test circuit Ω 7. TK6A53D Duty = t (ch-c) = 3.57 °C – 100 125 150 (° VDSS I AR ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK6A53D 2009-06-08 ...

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