TK6A53D TOSHIBA Semiconductor CORPORATION, TK6A53D Datasheet - Page 5

• Manufacturer Part Number: TK6A53D
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type ?-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
100
0.1
10
1
1
※ Single pulse Tc=25℃
Curves must be derated
linearly with increase in
temperature.
I D max (pulsed) *
I D max (continuous) *
Drain-source voltage V
Safe operating area
DC operation
Tc = 25°C
10
0.001
0.01
0.1
10
1
10μ
0.02
0.05
0.1
Duty=0.5
0.2
100
0.01
1 ms *
DS
100μ
(V)
100 μs *
1000
1m
SINGLE PULSE
Pulse width t
5
r
th
R G = 25 Ω
V
10m
DD
– t
w
= 90 V, L = 7.02 mH
200
160
120
w
80
40
0
25
−15 V
15 V
(s)
Channel temperature (initial) T
Test circuit
100m
50
P DM
Duty = t/T
R th (ch-c) = 3.57 °C/W
75
E
t
AS
1
T
Ε AS
– T
V
ch
100
DD
=
B
Wave form
2
1
VDSS
I
⋅
AR
L
⋅
10
2 I
ch
125
⋅
⎛
⎜
⎜
⎝
B VDSS
(°C)
V
2009-06-08
TK6A53D
DS
B VDSS
150
−
V DD
⎞
⎟
⎟
⎠