STY30NA50 STMicroelectronics, STY30NA50 Datasheet
STY30NA50
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STY30NA50 Summary of contents
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... Pulse width limited by safe operating area March 1996 FAST POWER MOS TRANSISTOR Max247 INTERNAL SCHEMATIC DIAGRAM Value 500 500 100 120 C 300 2.4 -55 to 150 150 STY30NA50 PRELIMINARY DATA TM Uni 1/4 ...
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... STY30NA50 THERMAL DATA R Thermal Resistance Junction-case t hj- Thermal Resistance Junction-ambient t hj- amb R Thermal Resistance Case-Heatsink thc with Conductive Grease AVALANCHE CHARACTERISTICS Symb ol Parameter I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited by T max Single Pulse Avalanche Energy AS o (starting ...
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... D GS Test Cond ition s Min. = 400 4 Test Cond ition s Min di/dt = 100 100 150 C j STY30NA50 Typ . Max 240 A/ s 245 320 120 nC Typ . Max 100 ns 30 ...
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... STY30NA50 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice ...