STY30NA50 STMicroelectronics, STY30NA50 Datasheet - Page 2

• Manufacturer Part Number: STY30NA50
• Description: N - Channel Enhancement Mode Fast Power Mos Transistor
• Manufacturer: STMicroelectronics

STY30NA50
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/4
Symb ol
V
Symb ol
Symb ol
Symb ol
R
R
R
R
V
g
(BR)DSS
I
t hj-ca se
thc- si nk
C
t hj- amb
I
I
C
E
E
DS( on)
D(o n)
C
GS(th)
fs
I
I
DSS
GSS
AR
AR
oss
AS
AR
rss
iss
( )
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-Heatsink
with Conductive Grease
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate T hreshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
DS
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max,
max,
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 25 V
= Max Rating
= Max Rating x 0.8 T
= 10 V I
> I
= 10 V
> I
=
= 10 V I
case
DD
D(on)
D(on)
GS
< 1%)
< 1%)
= 50 V)
30 V
= 25
Test Cond ition s
Test Cond ition s
Test Cond ition s
x R
x R
I
j
D
max,
D
f = 1 MHz
D
o
= 250 A
= 15 A
DS(on) max
DS(on) max
C unless otherwise specified)
= 15 A
< 1%)
T
c
V
c
= 100
GS
I
= 125
V
D
GS
= 15 A
= 0
Max
o
Max
= 0
Typ
C
o
C
Min.
Min.
Min.
2.25
500
30
25
Max Valu e
6150
3000
Typ .
Typ .
Typ .
0.42
0.05
0.15
180
780
220
40
30
19
3
0.175
Max.
1000
Max.
Max.
8000
1000
3.75
0.35
200
290
100
o
o
Un it
Un it
Un it
Unit
C/W
C/W
mJ
mJ
nA
pF
pF
pF
V
V
A
S
A
A
A
A