STQ1NC60R STMicroelectronics, STQ1NC60R Datasheet - Page 3

• Manufacturer Part Number: STQ1NC60R
• Description: N-channel 600v - 12ohm - 0.3a To-92 Powermesh??ii Power Mosfet
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
Symbol
Symbol
I
V
SDM
g
t
t
C
I
SD
C
r(Voff)
C
d(on)
Q
Q
fs
RRM
I
Q
2. Pulse width limited by safe operating area.
Q
SD
t
t
t
oss
t
iss
rss
rr
r
gs
gd
c
f
(1)
g
rr
(1)
(2)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Off-voltage Rise Time
Fall Time
Cross-over Time
Parameter
Parameter
Parameter
Parameter
V
V
R
(Resistive Load see, Figure 3)
V
V
I
I
V
(see test circuit, Figure 5)
V
R
(Inductive Load see, Figure 5)
V
SD
SD
DS
DD
DD
GS
DD
G
DD
G
DS
= 4.7
= 4.7
= 0.3 A, V
= 1 A, di/dt = 100A/µs
= 15 V
= 300 V, I
= 480V, I
= 10V, R
= 25 V, T
= 480V, I
= 25V, f = 1 MHz, V
Test Conditions
Test Conditions
Test Conditions
Test Conditions
,
V
V
I
GS
D
G
GS
D
D
GS
j
D
Thermal Impedance
= 0.3 A
= 150°C
= 4.7
= 1 A,
= 1 A,
= 10 V
= 0.5 A
= 10V
= 0
GS
= 0
Min.
Min.
Min.
Min.
Typ.
0.87
Typ.
Typ.
Typ.
108
450
720
2.5
7.2
7.3
3.4
2.5
3.2
18
33
43
11
8
STQ1NC60R
Max.
Max.
Max.
Max.
0.3
1.2
1.6
10
Unit
Unit
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
S
A
A
V
A
C
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