STQ1NC60R STMicroelectronics, STQ1NC60R Datasheet - Page 2

• Manufacturer Part Number: STQ1NC60R
• Description: N-channel 600v - 12ohm - 0.3a To-92 Powermesh??ii Power Mosfet
• Manufacturer: STMicroelectronics

STQ1NC60R
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
(1) I
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
2/9
Rthj-amb
V
Rthj-lead
dv/dt (1)
Symbol
Symbol
Symbol
SD
R
V
I
(BR)DSS
V
DM
P
I
I
V
DS(on)
V
E
GS(th)
T
I
DSS
GSS
DGR
TOT
AR
I
I
T
T
stg
DS
GS
AS
D
D
0.3A, di/dt 100A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering Purpose
Parameter
j
DS
= 25 °C, I
DD
= 0)
V
GS
(BR)DSS
= 0)
D
C
Parameter
GS
= I
= 25° C
, T
GS
j
= 20 k )
max)
AR
j
Parameter
= 0)
, V
T
JMAX.
DD
C
C
I
V
V
V
V
V
D
= 25° C
= 100° C
= 50 V)
DS
DS
GS
DS
GS
= 250 µA, V
= Max Rating
= Max Rating, T
= V
= ± 30V
= 10V, I
Test Conditions
GS
, I
D
D
= 0.3 A
GS
= 250µA
= 0
C
= 125 °C
Min.
600
-65 to 150
-65 to 150
2
Value
0.025
TO-92
± 30
0.19
600
600
0.3
1.2
3.1
120
260
40
3
Max Value
Typ.
0.3
60
12
3
Max.
±100
50
15
1
4
W/° C
°C/W
°C/W
V/ns
Unit
Unit
Unit
°C
°C
°C
W
mJ
V
V
V
A
A
A
µA
µA
nA
A
V
V