PH8230 NXP Semiconductors, PH8230 Datasheet - Page 7

• Manufacturer Part Number: PH8230
• Description: Ph8230 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 11118
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances
V GS(th)
I
V
D
(pF)
(V)
10 4
10 3
10 2
GS
2.5
1.5
0.5
C
= 1 mA; V
2
1
0
junction temperature.
as a function of drain-source voltage; typical
values.
-100
10 -1
= 0 V; f = 1 MHz
DS
= V
GS
1
0
100
10
V DS (V)
T j ( C)
03am27
C iss
C oss
C rss
03am29
10 2
200
Rev. 01 — 23 June 2003
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Source (diode forward) current as a function of
T
T
10 -1
10 -2
10 -3
10 -4
10 -5
(A)
j
j
I D
= 25 C
= 25 C and 150 C; V
80
60
40
20
(A)
I S
0
gate-source voltage.
source-drain (diode forward) voltage; typical
values.
0
0
min
0.5
1
150 C
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
GS
typ
= 0 V
T j = 25 C
2
1
max
V SD (V)
V GS (V)
PH8230
03am28
03am30
1.5
3
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