PH8230 NXP Semiconductors, PH8230 Datasheet - Page 5

• Manufacturer Part Number: PH8230
• Description: Ph8230 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Characteristics
Table 4:
T
9397 750 11118
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
t
t
Source-drain (reverse) diode
V
t
DSS
GSS
d(on)
r
d(off)
f
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
reverse recovery time
Characteristics
Conditions
I
I
V
V
V
V
V
I
V
V
I
D
D
D
S
S
DS
GS
GS
GS
DS
GS
DD
= 30 A; V
= 30 A; dI
= 10 mA; V
= 1 mA; V
= 30 A; V
Rev. 01 — 23 June 2003
= 30 V; V
=
= 10 V; I
= 4.5 V; I
= 10 V; I
= 0 V; V
= 10 V; I
16 V; V
GS
DD
S
DS
DS
D
D
D
/dt = 50 A/ s; V
D
GS
GS
N-channel enhancement mode field-effect transistor
= 15 A
= 15 A
= 15 A; V
= 0 V
= 10 V; V
= V
= 15 A
= 10 V; f = 1 MHz
DS
= 0 V
= 0 V; T
= 0 V
GS
GS
GS
j
= 25 C
= 10 V
= 10 V; R
GS
= 0 V
G
= 4.7
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
30
1
-
-
-
-
27
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
1.75
0.06
0.9
6.3
10.5
45
22
5
5
1500 -
400
220
15
55
48
11
0.85
60
PH8230
Max
-
2.5
1
10
8.2
15.3
-
-
-
-
-
-
-
-
-
-
1.11
-
5 of 12
Unit
V
V
m
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
A
A