PMF280UN-01 NXP Semiconductors, PMF280UN-01 Datasheet - Page 5
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PMF280UN-01
Manufacturer Part Number
PMF280UN-01
Description
Pmf280un N-channel Utrenchmos Tm Ultra Low Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1.PMF280UN-01.pdf
(12 pages)
Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12768
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
V
I
Figure 13
V
Figure 11
V
V
D
D
D
S
Rev. 01 — 27 February 2004
DS
GS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.3 A; V
= 1 A; V
= 0.25 mA; V
= 1 A; V
j
j
j
j
j
j
j
j
j
= 20 V; V
= 8 V; V
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 0 V; V
= 10 V; R
= 4.5 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
DD
GS
GS
DS
D
D
D
= 10 V; V
GS
DS
L
G
= 0 V
= 0.2 A;
= 0.1 A;
= 0.075 A;
= 10 ;
= 0 V;
DS
= 20 V; f = 1 MHz;
= 6
= 0 V
= 0 V
= V
Figure 12
GS
N-channel TrenchMOS™ ultra low level FET
GS
Figure 7
Figure 7
;
Figure 9
= 4.5 V;
Figure 7
and
and
and
8
8
8
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
20
18
0.45
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PMF280UN
Typ
-
-
0.7
-
-
-
-
10
280
448
360
460
0.89
0.13
0.18
45
11
7
4.5
10
18.5
5
0.83
Max
-
-
1
-
1.2
1
100
100
340
544
430
660
-
-
-
-
-
-
-
-
-
-
1.2
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
5 of 12
A
A