PMF280UN-01 NXP Semiconductors, PMF280UN-01 Datasheet

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PMF280UN-01

Manufacturer Part Number
PMF280UN-01
Description
Pmf280un N-channel Utrenchmos Tm Ultra Low Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT323 (SC-70), simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
M3D102
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
PMF280UN
N-channel TrenchMOS™ ultra low level FET
Rev. 01 — 27 February 2004
Surface mounted package
Low on-state resistance
Driver circuits
V
P
DS
tot
0.56 W
20 V
Simplified outline
Top view
SOT323 (SC-70)
1
3
MBC870
2
Symbol
Footprint 40% smaller than SOT23
Low threshold voltage.
Switching in portable appliances.
I
R
D
DSon
1.02 A
340 m .
MBB076
g
d
s
Product data

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PMF280UN-01 Summary of contents

Page 1

... Pinning information Table 1: Pinning - SOT323 (SC-70), simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) PMF280UN N-channel TrenchMOS™ ultra low level FET Rev. 01 — 27 February 2004 Surface mounted package Low on-state resistance Driver circuits 0.56 W tot Simplifi ...

Page 2

... 4 100 4 pulsed Figure pulsed Rev. 01 — 27 February 2004 PMF280UN N-channel TrenchMOS™ ultra low level FET Min - = Figure 2 and 3 - Figure Figure © ...

Page 3

... Product data 03aa17 120 I der (%) 150 200 der Fig 2. Normalized continuous drain current 4 Rev. 01 — 27 February 2004 PMF280UN N-channel TrenchMOS™ ultra low level FET 100 150 I D ------------------- = 100 function of solder point temperature. ...

Page 4

... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 12768 Product data N-channel TrenchMOS™ ultra low level FET Conditions Figure Rev. 01 — 27 February 2004 PMF280UN Min Typ Max Unit - - 220 K/W 03an27 t p ...

Page 5

... Figure 4 Figure MHz Figure 4 0 Figure Rev. 01 — 27 February 2004 PMF280UN Min Typ Max 0.45 0 100 - 10 100 8 - 280 340 - ...

Page 6

... V DS (V) Fig 6. Transfer characteristics: drain current as a 03an03 4.5 V 1 (A) Fig 8. Normalized drain-source on-state resistance Rev. 01 — 27 February 2004 PMF280UN N-channel TrenchMOS™ ultra low level FET 2 > DSon ( 150 C 1 ...

Page 7

... Fig 10. Sub-threshold drain current as a function (pF Rev. 01 — 27 February 2004 PMF280UN N-channel TrenchMOS™ ultra low level FET min typ 0 0.2 0.4 0 gate-source voltage. 03an06 C iss C oss C rss (V) © ...

Page 8

... Product data 03an05 1 (V) Fig 13. Gate-source voltage as a function of gate Rev. 01 — 27 February 2004 PMF280UN N-channel TrenchMOS™ ultra low level FET ( ...

Page 9

... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC EIAJ SC-70 Rev. 01 — 27 February 2004 PMF280UN N-channel TrenchMOS™ ultra low level FET detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 10

... Product data (9397 750 12768). 9397 750 12768 Product data 2.65 0.75 1.325 1. 0.50 0.60 (3x) 1.90 (3x) 1 0.55 (3x) MSA429 2.40 Rev. 01 — 27 February 2004 PMF280UN N-channel TrenchMOS™ ultra low level FET solder lands solder resist occupied area solder paste © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 11

... TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 27 February 2004 Rev. 01 — 27 February 2004 PMF280UN PMF280UN N-channel TrenchMOS™ ultra low level FET N-channel TrenchMOS™ ultra low level FET © Koninklijke Philips Electronics N.V. 2004. All rights reserved. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 12

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 27 February 2004 Document order number: 9397 750 12768 PMF280UN N-channel TrenchMOS™ ultra low level FET ...

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