SIR888DP Vishay, SIR888DP Datasheet - Page 5

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SIR888DP

Manufacturer Part Number
SIR888DP
Description
N-channel 25-v D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR888DP-T1-GE3
Manufacturer:
V1SHAY
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68627
S-81010-Rev. A, 05-May-08
60
48
36
24
12
0
0
25
D
Power, Junction-to-Case
T
is based on T
C
- Case Temperature (°C)
50
75
J(max)
100
100
80
60
40
20
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
Package Limited
25
New Product
T
150
C
Current Derating*
- Case Temperature (°C)
50
75
100
2.5
2.0
1.5
1.0
0.5
0.0
125
0
150
25
Power, Junction-to-Ambient
T
C
- Case Temperature (°C)
50
75
Vishay Siliconix
SiR888DP
100
www.vishay.com
125
150
5

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