SIR888DP Vishay, SIR888DP Datasheet - Page 3

• Manufacturer Part Number: SIR888DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68627
S-81010-Rev. A, 05-May-08
0.0040
0.0036
0.0032
0.0028
0.0024
0.0020
70
56
42
28
14
10
0
8
6
4
2
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
D
= 20 A
0.5
14
16
V
V
GS
DS
Output Characteristics
Q
= 10 thru 3 V
g
- Drain-to-Source Voltage (V)
I
- Total Gate Charge (nC)
D
- Drain Current (A)
V
1.0
Gate Charge
28
32
DS
= 15 V
V
V
V
GS
DS
GS
1.5
42
48
= 4.5 V
= 10 V
= 10 V
V
V
DS
GS
2.0
56
= 20 V
64
= 2 V
New Product
2.5
70
80
6150
4920
3690
2460
1230
1.8
1.6
1.4
1.2
1.0
0.8
0.6
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0.0
0
I
D
C
On-Resistance vs. Junction Temperature
= 15 A
rss
- 25
T
C
= 125 °C
T
0.8
C
5
V
V
= 25 °C
T
GS
Transfer Characteristics
DS
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
C
oss
iss
25
Capacitance
1.6
10
50
Vishay Siliconix
2.4
15
75
T
SiR888DP
C
= - 55 °C
V
GS
www.vishay.com
100
V
GS
= 4.5 V
3.2
20
= 10 V
125
150
4.0
25
3