SIR888DP Vishay, SIR888DP Datasheet - Page 4

• Manufacturer Part Number: SIR888DP
• Description: N-channel 25-v D-s Mosfet
• Manufacturer: Vishay

SiR888DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.4
- 0.7
- 1.0
- 0.1
0.01
100
0.5
0.2
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
J
V
= 150 °C
SD
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
I
D
75
= 250 µA
0.8
Limited by R
0.01
100
0.1
T
10
J
100
1
0.01
= 25 °C
I
D
1.0
Safe Operating Area, Junction-to-Ambient
* V
= 5 mA
125
DS(on)
GS
New Product
> minimum V
V
1.2
Single Pulse
150
0.1
DS
*
T
A
- Drain-to-Source Voltage (V)
= 25 °C
GS
at which R
1
BVDSS
Limited
0.015
0.012
0.009
0.006
0.003
0.000
DS(on)
200
160
120
10
80
40
0
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
100 ms
1 s
10 s
10 ms
DC
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
S-81010-Rev. A, 05-May-08
Document Number: 68627
6
T
T
1
J
J
= 125 °C
= 25 °C
8
10
1
0