PHP125N06T NXP Semiconductors, PHP125N06T Datasheet - Page 6

• Manufacturer Part Number: PHP125N06T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
Fig.13. Typical turn-on gate-charge characteristics.
V
VGS/V
IF/A
I
100
GS
F
80
60
40
20
0
= f(V
12
10
0
8
6
4
2
0
= f(Q
Fig.14. Typical reverse diode current.
0
SDS
10
G
); conditions: I
0.2
); conditions: V
20
30
0.4
transistor
Tj/C =
40
VSDS/V
D
0.6
50
GS
VDS = 14V
QG/nC
= 50 A; parameter V
175
= 0 V; parameter T
60
0.8
70
25
VDS = 44V
80
1
BUK7508-55
90
1.2
100
DS
j
6
VGS
0
VGS
0
Fig.15. Normalised avalanche energy rating.
120
110
100
90
80
70
60
50
40
30
20
10
0
Fig.16. Avalanche energy test circuit.
20
W
WDSS%
W
DSS
Fig.17. Switching test circuit.
DSS
40
% = f(T
RGS
0.5 LI
60
RG
mb
80
); conditions: I
D
2
BV
Tmb / C
100
DSS
L
RD
VDS
120
BV
T.U.T.
VDS
T.U.T.
Product specification
DSS
PHP125N06T
140
D
shunt
= 75 A
R 01
V
DD
160
-
+
-
+
Rev 1.100
-ID/100
180
VDD
VDD