PHP125N06T NXP Semiconductors, PHP125N06T Datasheet - Page 4

• Manufacturer Part Number: PHP125N06T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
ID% = 100 I
I
120
110
100
Fig.2. Normalised continuous drain current.
RDS(ON) = VDS/ID
D
150
125
100
90
80
70
60
50
40
30
20
10
75
50
25
0
& I
0
1000
Fig.3. Safe operating area. T
100
Fig.1. Normalised power dissipation.
0
0
10
PD%
ID (A)
DM
1
1
= f(V
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
DS
); I
transistor
60
60
DM
= f(T
DC
single pulse; parameter t
10
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
D 25 ˚C
100
100
Normalised Power Derating
VDS / V
Limited by package
120
120
= f(T
Current Derating
mb
140
140
mb
= 25 ˚C
100
)
tp = 10 us
100 us
1 ms
10 ms
100 ms
160
160
BUKX508-55
GS
180
180
5 V
p
4
15
10
5
0
Fig.5. Typical output characteristics, T
ID/A
Fig.6. Typical on-state resistance, T
100
1E+00
0
1E-01
1E-02
1E-03
RDS(ON)/mOhm
80
60
40
20
VGS/V=
0
0
16
1E-07
Fig.4. Transient thermal impedance.
Zth / (K/W)
0.05
0.02
20
Z
0.5
0.2
0.1
6.5
R
th j-mb
0
10
I
DS(ON)
D
2
= f(V
1E-05
= f(t); parameter D = t
40
= f(I
DS
); parameter V
5.5
4
D
); parameter V
ID/A
60
VDS/V
1E-03
t / s
6
P
D
Product specification
VGS/V =
80
PHP125N06T
6
1E-01
t
p
GS
T
GS
p
/T
8
j
100
D =
j
= 25 ˚C .
= 25 ˚C .
BUK7508-55
T
t
6.5
Rev 1.100
p
t
10
1E+01
6.0
5.5
5.0
4.5
4.0
7
8
10
120