TF218THC Sanyo Semiconductor Corporation, TF218THC Datasheet - Page 2

• Manufacturer Part Number: TF218THC
• Description: N-channel Silicon Junction Fet
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
* : The TF218THC is classified by I DSS as follows : (unit : µA)
Package Dimensions
unit : mm (typ)
7031-001
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
[Ta=25°C, V CC =4.5V, R L =1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Input Impedance
Output Impedance
Total Harmonic Distortion
Output Noise Voltage
500
450
400
350
300
250
200
150
100
50
0
0
Rank
I DSS
Bottom View
Top View
1
1
Parameter
1.4
3
0.45
Drain-to-Source Voltage, V DS -- V
2
2
0.25
0.2
140 to 240
3
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
4
I D -- V DS
4
0.1
5
210 to 350
6
V (BR)GDO
V GS(off)
Symbol
5
∆G VV
 yfs 
I DSS
∆Gvf
V NO
Ciss
Crss
THD
Z IN
G V
Z O
7
8
I G =- -100µA
V DS =5V, I D =1µA
V DS =5V, V GS =0V
V DS =5V, V GS =0V, f=1kHz
V DS =5V, V GS =0V, f=1MHz
V DS =5V, V GS =0V, f=1MHz
V IN =10mV, f=1kHz
V IN =10mV, f=1kHz, V CC =4.5→1.5V
f=1kHz to 110Hz
f=1kHz
f=1kHz
V IN =30mV, f=1kHz
V IN =0V, A curve
--0.5V
IT02310
9
TF218THC
10
Conditions
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
500
400
300
200
100
450
350
250
150
50
0
0
15pF
OSC
Drain-to-Source Voltage, V DS -- V
1
min
140*
I D -- V DS
--0.2
--20
2
0.5
25
VTVM
33µF
+
1kΩ
Ratings
typ
1000
0.65
--0.6
--3.0
--1.2
V
1.0
3.5
1.2
3
THD
Output Impedance
max
B
350*
--110
--1.0
--3.5
--1.0
V CC =4.5V
V CC =1.5V
4
No. A0890-2/5
A
--0.5V
IT03015
Unit
MΩ
mS
µA
dB
dB
dB
dB
pF
pF
Ω
%
V
V
5