TF218 Sanyo Semiconductor Corporation, TF218 Datasheet

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TF218

Manufacturer Part Number
TF218
Description
N-channel Silicon Junction Fet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Ordering number : ENN7088
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
* : The TF218 is classified by I DSS as follows : (unit : A)
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Ultrasmall package facilitates miniaturization in end
products.
Especially suited for use in audio, telephone capacitor
microphones.
Excellent voltage characteristic.
Excellent transient characteristic.
Adoption of FBET process.
Marking
I DSS
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
140 to 240
A4
SANYO Electric Co.,Ltd. Semiconductor Company
210 to 350
V (BR)GDO
V GS(off)
A5
Symbol
Symbol
V GDO
I DSS
Crss
Tstg
Ciss
P D
yfs
I G
I D
Tj
I G =--100 A
V DS =5V, I D =1 A
V DS =5V, V GS =0
V DS =5V, V GS =0, f=1kHz
V DS =5V, V GS =0, f=1MHz
V DS =5V, V GS =0, f=1MHz
Capacitor Microphone Applications
TF218
Conditions
Package Dimensions
unit : mm
2201
Conditions
(Bottom view)
0.45
2
1.4
3
0.25
1
N-channel Silicon Junction FET
0.2
min
[TF218]
140*
- -0.2
--20
0.5
N3001 TS IM TA-3366
1
(Top view)
Ratings
3
typ
Ratings
0.65
--0.6
0.1
1.0
3.5
2
Continued on next page.
--55 to +150
1 : Drain
2 : Source
3 : Gate
SANYO : VSFP
max
TF218
350*
--1.0
--20
100
150
10
1
No.7088-1/4
Unit
mW
Unit
mA
mA
mS
pF
pF
V
V
V
C
C
A

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TF218 Summary of contents

Page 1

... V (BR)GDO Cutoff Voltage V GS(off) Zero-Gate Voltage Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance * : The TF218 is classified by I DSS as follows : (unit : A) Marking DSS 140 to 240 210 to 350 Any and all SANYO products described or contained herein do not have specifications that can handle ...

Page 2

... Gate-to-Source Voltage TF218 Conditions =10mV, f=1kHz =10mV, f=1kHz =4.5 1.5V Gvf f=1kHz to 110Hz Z IN f=1kHz Z O f=1kHz THD V IN =30mV, f=1kHz V IN =0, A curve V CC =4. =1.5V ...

Page 3

... =4. =10mV -- =1.0kΩ f=1kHz I DSS : V DS =5.0V --2 --3 --4 --5 --6 --7 0 100 200 300 400 Drain Current, I DSS -- µA TF218 700 650 600 550 500 450 400 350 300 500 0 100 Drain Current, I DSS -- µA IT02314 120 f=1kHz 100 80 60 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of Nobember, 2001. Specifications and information herein are subject to change without notice. TF218 DSS ...

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