TF222B Sanyo Semiconductor Corporation, TF222B Datasheet - Page 2

• Manufacturer Part Number: TF222B
• Description: N-channel Silicon Junction Fet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm
7048-001
Frequency Characteristics
Total Harmonic Distortion
Output Noise Voltage
400
300
200
100
500
400
300
200
100
--1.0
0
0
0
Bottom View
Top View
1
Parameter
1
1.2
3
3
--0.8
Drain-to-Source Voltage, V DS -- V
1
Gate-to-Source Voltage, V GS -- V
0.4
2
2
0.2
I D -- V GS
--0.6
I D -- V DS
2
1 : Drain
2 : Source
3 : Gate
SANYO : TSSFP
0 to 0.02
0.11
--0.4
3
--0.4V
Symbol
V NO
THD
Gvf
--0.2
4
V DS =2V
--0.3V
f=1kHz to 110Hz
V IN =30mV, f=1kHz
V IN =0V, A curve
IT04743
IT04745
5
0
TF222B
Conditions
Voltage gain
Frequency Characteristics
Distortion
Reduced Voltage Characteristics
Test Circuit
400
300
200
100
500
400
300
200
100
--1.0
0
0
0
5pF
OSC
--0.8
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
0.5
min
--0.6
I D -- V DS
I D -- V GS
1.0
Ratings
VTVM
typ
2.2k
33 F
+
--0.4
0.7
--0.4V
V
Output Impedance
max
1.5
THD
--102
--1.0
--0.2
No. A0171-2/4
V DS =2V
B
--0.3V
V CC =2V
V CC =1.5V
IT04744
IT04746
A
Unit
dB
dB
%
2.0
0