TF222B Sanyo Semiconductor Corporation, TF222B Datasheet
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TF222B
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TF222B Summary of contents
Page 1
... Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance [Ta=25˚ =2.0V =2.2k , Cin=5pF, See specified Test Circuit.] Voltage Gain Reduced Voltage Characteristics * : The TF222B is classified by I DSS as follows : (unit : A) Rank B4 I DSS 140 to 240 Marking : B Any and all SANYO products described or contained herein do not have specifications that can handle ...
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... Drain-to-Source Voltage 500 400 300 200 100 0 --1.0 --0.8 --0.6 --0.4 Gate-to-Source Voltage TF222B Symbol Conditions Gvf f=1kHz to 110Hz THD V IN =30mV, f=1kHz =0V, A curve Test Circuit Voltage gain Frequency Characteristics Distortion Reduced Voltage Characteristics 400 ...
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... R L =2.2k --1.5 Cin=5pF I DSS : V DS =2V --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 0 100 200 300 Drain Current, I DSS -- THD -- I DSS 1.2 THD : V CC =2V 1.0 I DSS : V DS =2V 0.8 0.6 0.4 0 100 200 300 Drain Current, I DSS -- TF222B 2 = 1.8 1.6 1.4 1.2 1.0 0.8 0.6 400 500 0 A IT04747 =0V f=1MHz 0.1 IT10230 0 --0 ...
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... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. TF222B PS No. A0171-4/4 ...