TF222B Sanyo Semiconductor Corporation, TF222B Datasheet

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TF222B

Manufacturer Part Number
TF222B
Description
N-channel Silicon Junction Fet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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Ordering number : ENA0171
TF222B
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
* : The TF222B is classified by I DSS as follows : (unit : A)
Marking : B
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
[Ta=25˚C, V CC =2.0V, R L =2.2k , Cin=5pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristics
Especially suited for use in condenser microphone for audio equipments and telephones.
TF222B is possible to make applied sets smaller and thinner.
Excellent voltage characteristic.
Excellent transient characteristic.
Adoption of FBET process.
Rank
I DSS
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
140 to 240
B4
SANYO Electric Co.,Ltd. Semiconductor Company
N-channel Silicon Junction FET
Condenser Microphone Applications
210 to 350
V (BR)GDO
V GS (off)
B5
Symbol
Symbol
V GDO
I DSS
Ciss
Crss
Tstg
G V
G VV
P D
yfs
I G
I D
Tj
I G =--100 A
V DS =2V, I D =1 A
V DS =2V, V GS =0V
V DS =2V, V GS =0V, f=1kHz
V DS =2V, V GS =0V, f=1MHz
V DS =2V, V GS =0V, f=1MHz
V IN =10mV, f=1kHz
V IN =10mV, f=1kHz, V CC =2.0 1.5V
TF222B
Conditions
Conditions
D2805GB MS IM TB-00001894
min
140*
- -0.1
--20
0.5
Ratings
typ
Ratings
--2.0
--0.6
1.4
5.0
1.1
Continued on next page.
--55 to +150
max
350*
--1.0
--2.0
100
150
--20
10
No. A0171-1/4
1
Unit
mW
Unit
mA
mA
mS
dB
dB
pF
pF
V
V
V
C
C
A

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TF222B Summary of contents

Page 1

... Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance [Ta=25˚ =2.0V =2.2k , Cin=5pF, See specified Test Circuit.] Voltage Gain Reduced Voltage Characteristics * : The TF222B is classified by I DSS as follows : (unit : A) Rank B4 I DSS 140 to 240 Marking : B Any and all SANYO products described or contained herein do not have specifications that can handle ...

Page 2

... Drain-to-Source Voltage 500 400 300 200 100 0 --1.0 --0.8 --0.6 --0.4 Gate-to-Source Voltage TF222B Symbol Conditions Gvf f=1kHz to 110Hz THD V IN =30mV, f=1kHz =0V, A curve Test Circuit Voltage gain Frequency Characteristics Distortion Reduced Voltage Characteristics 400 ...

Page 3

... R L =2.2k --1.5 Cin=5pF I DSS : V DS =2V --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 0 100 200 300 Drain Current, I DSS -- THD -- I DSS 1.2 THD : V CC =2V 1.0 I DSS : V DS =2V 0.8 0.6 0.4 0 100 200 300 Drain Current, I DSS -- TF222B 2 = 1.8 1.6 1.4 1.2 1.0 0.8 0.6 400 500 0 A IT04747 =0V f=1MHz 0.1 IT10230 0 --0 ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. TF222B PS No. A0171-4/4 ...

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