UF8010 Unisonic Technologies, UF8010 Datasheet - Page 4

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UF8010

Manufacturer Part Number
UF8010
Description
80 Amps, 100 Volts N-channel Power Mosfet
Manufacturer
Unisonic Technologies
Datasheet
UF8010
TEST CIRCUITS AND WAVEFORMS
Re-Applied
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Voltage
Recovery
Reverse
Current
1
1
2
4
3
* Reverse Polarity of D.U.T. for P-Channel
2
+
R
-
D.U.T. I
D.U.T. V
Inductor Current
Driver Gate Drive
G
* V
D.U.T.
GS
P.W.
SD
= 5.0V for Logic Level Devices
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple≤5%
Body Diode Forward Drop
Period
Preliminary
Body Diode Forward
Diode Recovery
+
-
3
Current
· dv/dt controlled by RG
· Driver same type as D.U.T
· ISD controlled by Duty Factor “D”
· D.U.T. – Device Under Test
dv/dt
di/dt
Circuit Layout Considerations
· Low Leakage Inductance
· Low Stray Inductance
Current Transformer
· Ground Plane
D=
Period
-
P.W.
4
+
V
V
I
SD
GS
DD
=10V*
Power MOSFET
+
- V
DD
QW-R502-348.a
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