UF8010 Unisonic Technologies, UF8010 Datasheet

no-image

UF8010

Manufacturer Part Number
UF8010
Description
80 Amps, 100 Volts N-channel Power Mosfet
Manufacturer
Unisonic Technologies
Datasheet
UF8010
80 Amps, 100 Volts
N-CHANNEL POWER MOSFET
excellent R
excellent efficiency. This device is suitable for high frequency DC-DC
converters, UPS and motor control.
* R
* Lower gate-drain charge for lower switching losses
* Perfect avalanche voltage and current performance
* Fully characterized capacitance including effective C
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
design
DS(ON)
UF8010L-TA3-T
The UTC UF8010 uses advanced technology to provide
DESCRIPTION
FEATURES
SYMBOL
ORDERING INFORMATION
Lead Free
:12mΩ (Typ.)
DS(ON)
Ordering Number
, fast switching speed, low gate charge, and
UNISONIC TECHNOLOGIES CO., LTD
UF8010G-TA3-T
Halogen Free
Preliminary
Package
TO-220
OSS
to simplify
G
1
Pin Assignment
D
2
S
3
Packing
Tube
Power MOSFET
QW-R502-348.a
1 of 6

Related parts for UF8010

UF8010 Summary of contents

Page 1

... UNISONIC TECHNOLOGIES CO., LTD UF8010 80 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF8010 uses advanced technology to provide excellent R , fast switching speed, low gate charge, and DS(ON) excellent efficiency. This device is suitable for high frequency DC-DC converters, UPS and motor control. FEATURES * R :12mΩ (Typ.) ...

Page 2

... UF8010 ABSOLUTE MAXIMUM RATINGS PARAMETER Gate to Source Voltage Continuous Drain Current (V =10V,T GS Pulsed Drain Current Single Pulse (Note 2,3) Avalanche Energy Repetitive Avalanche Current Peak Diode Recovery dv/dt (Note 4) Power Dissipation (T =25°C) C Derating above 25°C Junction Temperature Storage Temperature Notes 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. ...

Page 3

... UF8010 ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current (Note 1,2) Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width ≤ 300μs; duty cycle ≤ ...

Page 4

... UF8010 TEST CIRCUITS AND WAVEFORMS D.U. Reverse Polarity of D.U.T. for P-Channel 1 Driver Gate Drive P.W. 2 D.U. Reverse Recovery Current 3 D.U. Re-Applied Voltage 4 Inductor Current * V = 5.0V for Logic Level Devices GS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations · Low Stray Inductance · ...

Page 5

... UF8010 TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Time Test Circuit D.U. 10V Pulse Width≤1μs Duty Factor≤0.1% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Preliminary 90 10 Power MOSFET Switching Time Waveforms d(off) d(on QW-R502-348 ...

Page 6

... UF8010 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury ...

Related keywords