UF8010 Unisonic Technologies, UF8010 Datasheet - Page 2

• Manufacturer Part Number: UF8010
• Description: 80 Amps, 100 Volts N-channel Power Mosfet
• Manufacturer: Unisonic Technologies

Gate to Source Voltage
Continuous Drain Current (V
Pulsed Drain Current
Avalanche Energy
Avalanche Current
Peak Diode Recovery dv/dt (Note 4)
Power Dissipation (T
Derating above 25°C
Junction Temperature
Storage Temperature
Notes 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Junction to Ambient
Junction to Case
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Forward Current
Gate-Source Reverse Current
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
UF8010
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
THERMAL DATA
2. Calculated continuous current based on maximum allowable junction temperature. Package limitation
3. Starting T
4. I
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
current is 75A.
SD
UNISONIC TECHNOLOGIES CO., LTD
≤45A, di/dt≤110A/μs, V
www.unisonic.com.tw
PARAMETER
PARAMETER
PARAMETER
J
C
= 25°C, L = 0.31mH, R
=25°C)
Single Pulse (Note 2,3)
Repetitive
GS
=10V,T
DD
C
=25°C)
≤BV
G
DSS
SYMBOL
=25Ω, I
Preliminary
V
R
BV
t
, T
C
C
t
D(OFF)
C
Q
Q
I
I
GS(TH)
DS(ON)
D(ON)
Q
DSS
GSS
t
OSS
RSS
t
ISS
GD
R
F
GS
DSS
J
G
≤ 175°C
(T
AS
J
=25°C, unless otherwise specified)
= 45A.
SYMBOL
SYMBOL
V
V
V
V
V
V
V
V
V
V
I
D
dv/dt
T
V
GS
DS
GS
GS
DS
GS
DS
DD
GS
DS
E
E
= 80A (Note 1)
I
θ
θ
I
P
T
I
DM
STG
AR
GS
AR
D
AS
JA
JC
D
=100V,V
=80V, V
J
=0 V, I
= 20 V
= -20 V
= V
= 10 V, I
=25 V,V
=50V,I
= 10V (Note 1)
TEST CONDITIONS
GS
, I
D
D
D
GS
GS
GS
=250μA
= 80A, R
D
= 250μA
=10V
MIN
= 45A (Note 1)
=0V
=0V, f =1.0MHz
G
= 39Ω
-55 ~ + 175
80 (Note 2)
TYP
RATINGS
+175
±20
320
310
260
1.8
26
45
16
MIN
100
2.0
Power MOSFET
MAX
0.57
62
3830
TYP MAX UNIT
480
130
120
12
59
15
61
81
22
26
-200
200
120
4.0
QW-R502-348.a
20
15
UNIT
W/°C
UNIT
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
2 of 6
mΩ
μA
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V