MP4304 TOSHIBA Semiconductor CORPORATION, MP4304 Datasheet - Page 4

• Manufacturer Part Number: MP4304
• Description: Toshiba Power Transistor Module Silicon Npn Epitaxial Type High Gain Power Transistor 4 In 1
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.05
0.5
0.3
0.1
30
10
5
3
1
5
I C max (pulsed)*
*: Single nonrepetitive
Curves must be derated
linearly with increase in
temperature.
pulse Ta = 25°C
Collector-emitter voltage V
10
100
Safe Operating Area
10
0.001
1
10 ms*
Curves should be applied in thermal limited area. The figure
shows thermal resistance per device versus pulse width.
These curves are obtained by using single nonrepetitive
pulse under the condition of devices attached on a circuit
board with no heat sink.
(1) 1 device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
30
1 ms*
V CEO max
0.01
50
100 μs*
CE
100
(V)
0.1
200
Pulse width t
r
th
– t
1
4
w
w
(s)
160
120
80
40
8
6
4
2
0
0
0
0
10
(1)
(4)
(3)
(2)
Total power dissipation P
40
2
Ambient temperature Ta (°C)
(1)
100
(2) (3) (4)
Circuit board
(3)
(2)
80
4
ΔT
P
T
j
(1)
– Ta
(4)
– P
Attached on a circuit board
(1) 1device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
Attached on a circuit board
(1) 1-device operation
(2) 2-device operation
(3) 3-device operation
(4) 4-device operation
120
T
1000
6
Circuit board
T
Circuit board
(W)
160
8
2006-10-27
MP4304
200
10