MP4304 TOSHIBA Semiconductor CORPORATION, MP4304 Datasheet

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MP4304

Manufacturer Part Number
MP4304
Description
Toshiba Power Transistor Module Silicon Npn Epitaxial Type High Gain Power Transistor 4 In 1
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
MP4304
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Absolute Maximum Ratings
Array Configuration
Small package by full molding (SIP 12 pin)
High collector power dissipation (4-device operation)
: P
High collector current: I
High DC current gain: h
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Continuous base current
Collector power dissipation
(1-device operation)
Collector power dissipation
(4-device operation)
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
1
6
T
= 4.4 W (Ta = 25°C)
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
2
5
3
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
DC
Pulse
C (DC)
FE
4
= 600 (min) (V
(Four High Gain Power Transistors inOne)
= 3 A (max)
8
(Ta = 25°C)
Symbol
V
V
V
T
I
P
CBO
CEO
EBO
P
I
CP
I
T
stg
C
B
C
T
j
9
MP4304
CE
= 2 V, I
12
10
−55 to 150
Rating
150
C
0.5
2.2
4.4
80
80
7
3
5
1
= 1 A)
11
7
Unit
°C
°C
W
W
V
V
V
A
A
Weight: 3.9 g (typ.)
JEDEC
JEITA
TOSHIBA
Industrial Applications
2-32C1B
2006-10-27
MP4304
Unit: mm

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MP4304 Summary of contents

Page 1

... Symbol Rating V 80 CBO V 80 CEO V 7 EBO 150 j T −55 to 150 stg Industrial Applications Unit JEDEC ― A JEITA ― A TOSHIBA 2-32C1B Weight: 3.9 g (typ °C °C 2006-10-27 MP4304 Unit: mm ...

Page 2

... B1 B2 (Ta = 25°C) Symbol Test Condition I ― 100 μ MP4304 Min Typ. Max ― ― 10 ― ― ― ― 80 ― ― 600 ― ― 150 ― ― ― 0.25 0.5 ― ...

Page 3

... Common emitter 100 −55°C 0.5 25 0.3 100 0 0.01 0.03 3 MP4304 I – − 100°C 0.4 0.6 0.8 1.0 1.2 1.4 Base-emitter voltage V ( – Common emitter Ta = 25° 0.5 0 100 300 1000 Base current I ...

Page 4

... Ambient temperature Ta (°C) 160 200 (1) 120 Total power dissipation P 4 MP4304 (3) (4) (1) (2) Circuit board 100 1000 P – Attached on a circuit board (1) 1device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Circuit board 80 120 160 200 Δ ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 MP4304 20070701-EN 2006-10-27 ...

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