MP4304 TOSHIBA Semiconductor CORPORATION, MP4304 Datasheet - Page 2

• Manufacturer Part Number: MP4304
• Description: Toshiba Power Transistor Module Silicon Npn Epitaxial Type High Gain Power Transistor 4 In 1
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Marking
Thermal Characteristics
Electrical Characteristics
Flyback-Diode Rating and Characteristics
Thermal resistance from junction to
ambient
(4-device operation, Ta = 25°C)
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Saturation voltage
Transition frequency
Collector output capacitance
Switching time
Maximum forward current
Reverse current
Reverse voltage
Forward voltage
Characteristics
Characteristics
Characteristics
JAPAN
MP4304
Collector-emitter
Base-emitter
Turn-on time
Storage time
Fall time
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
V
ΣR
V
V
Symbol
Symbol
Symbol
(BR) CBO
(BR) CEO
h
h
CE (sat)
BE (sat)
I
I
FE (1)
FE (2)
CBO
EBO
C
t
I
V
th (j-a)
t
V
T
stg
FM
I
f
on
t
R
T
ob
L
f
R
F
V
V
I
I
V
V
I
I
V
V
I
V
I
I
C
C
C
C
B1
R
F
Max
28.4
CB
EB
CE
CE
CE
CB
R
260
= 1 A
= 1 mA, I
= 10 mA, I
= 1.5 A, I
= 1.5 A, I
= 100 μA
= 80 V
= −I
20 μs
= 80 V, I
= 7 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 10 V, I
2
B2
(Ta = 25°C)
Input
= 15 mA, duty cycle ≤ 1%
°C/W
Unit
E
B
B
C
C
C
C
°C
Test Condition
Test Condition
B
E
E
= 0 A
= 15 mA
= 15 mA
= 0 A
= 1 A
= 2 A
= 0.1 A
= 0 A
= 0 A
= 0 A, f = 1 MHz
I
I
B1
B2
―
V
CC
= 30 V
Output
600
150
Min
Min
80
80
80
―
―
―
―
―
―
―
―
―
―
―
―
Typ.
0.25
Typ.
0.4
2.6
1.3
85
50
―
―
―
―
―
―
―
―
―
―
―
2006-10-27
Max
Max
0.5
1.2
0.4
1.5
10
10
―
―
―
―
―
―
―
―
―
―
MP4304
3
MHz
Unit
Unit
μA
μA
μA
pF
―
μs
V
V
V
A
V
V