FSS133 Sanyo Semiconductor Corporation, FSS133 Datasheet

no-image

FSS133

Manufacturer Part Number
FSS133
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENN6919
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : S133
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
I DSS
I GSS
Tstg
I DP
Tch
P D
yfs
I D
I D =--1mA, V GS =0
V DS =- -20V, V GS =0
V GS = 8V, V DS =0
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =--8A
I D =--8A, V GS =- -4V
I D =--2A, V GS =- -2.5V
PW 10 s, duty cycle 1%
Mounted on a ceramic board (1200mm
FSS133
Conditions
Package Dimensions
unit : mm
2116
Conditions
0.595
Load Switching Applications
8
1
1.27
5.0
0.43
2
0.8mm)
4
5
[FSS133]
min
P-Channel Silicon MOSFET
14.7
--0.4
--20
22001 TS IM TA-2721
Ratings
typ
Ratings
21
18
25
0.2
--55 to +150
Continued on next page.
FSS133
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
max
150
--1.4
- -20
- -52
1.8
10
--8
10
24
35
--1
No.6919-1/4
Unit
m
m
Unit
W
V
V
A
A
V
V
S
C
C
A
A

Related parts for FSS133

FSS133 Summary of contents

Page 1

... Tstg Conditions I D =--1mA -20V 8V -10V =--1mA yfs -10V =-- =--8A - =--2A -2.5V P-Channel Silicon MOSFET FSS133 [FSS133 Source 2 : Source 3 : Source Gate 0 Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8 ...

Page 2

... See specified Test Circuit =--10V =--10V -8A Qgs V DS =--10V =--10V -8A Qgd V DS =--10V =--10V - =--8A -- =1.25Ω OUT FSS133 S -- --10V --14 --12 --10 --8 --6 -- --1.0V --2 0 --0.5 --0 ...

Page 3

... Drain Current 2.5 2.0 1.8 1.5 1.0 0 100 120 Amibient Tamperature °C FSS133 --100 --10V -- --1 --0 --0. --0.001 --0.2 --10 Diode Forward Voltage ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2001. Specifications and information herein are subject to change without notice. FSS133 PS No.6919-4/4 ...

Related keywords