FSS275 Sanyo Semiconductor Corporation, FSS275 Datasheet - Page 2

• Manufacturer Part Number: FSS275
• Description: N-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7005-002
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
0.595
6
5
4
3
2
1
0
0
1
8
1.27
0.1
Parameter
5.0
0.2
Drain-to-Source Voltage, V DS -- V
5
0.3
4
0.43
I D -- V DS
0.4
0.5
0.6
0.2
Symbol
t d (on)
t d (off)
Coss
Ciss
Crss
V SD
0.7
Qgs
Qgd
Qg
t r
t f
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
0.8
V DS =20V, f=1MHz
V DS =20V, f=1MHz
V DS =20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =30V, V GS =10V, I D =6A
V DS =30V, V GS =10V, I D =6A
V DS =30V, V GS =10V, I D =6A
I S =6A, V GS =0V
0.9
IT12181
1.0
FSS275
Conditions
9
8
7
6
5
4
3
2
1
0
Switching Time Test Circuit
0
V DS =10V
10V
P.G
0V
PW=10µs
D.C.≤1%
0.5
V IN
Gate-to-Source Voltage, V GS -- V
1.0
V IN
min
1.5
50Ω
G
I D -- V GS
2.0
Ratings
V DD =30V
typ
D
1100
0.82
110
3.1
3.7
70
16
27
90
50
21
2.5
S
R L =10Ω
I D =3A
max
FSS275
3.0
V OUT
1.2
No. A0732-2/4
3.5
IT12182
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
4.0