FSS275 Sanyo Semiconductor Corporation, FSS275 Datasheet

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FSS275

Manufacturer Part Number
FSS275
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FSS275-S-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : ENA0732
FSS275
Features
Specifications
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : S275
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
4V drive.
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer ' s products or
equipment.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
I GSS
 yfs 
I DSS
Tstg
I DP
Tch
P D
I D
I D
Duty cycle≤1%
Duty cycle≤1%
Mounted on a ceramic board (2000mm
I D =1mA, V GS =0V
V DS =60V, V GS =0V
V GS =±16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =3A
I D =3A, V GS =10V
I D =3A, V GS =4V
SANYO Semiconductors
FSS275
Conditions
Conditions
2
✕0.8mm), PW≤10s
32207PA TI IM TC-00000366
DATA SHEET
min
1.2
3.4
60
Ratings
typ
Ratings
5.8
33
44
Continued on next page.
--55 to +150
max
±20
150
6.5
1.9
±10
60
24
2.6
43
62
No. A0732-1/4
6
1
Unit
Unit
mΩ
mΩ
µA
µA
°C
°C
W
V
V
A
A
A
V
V
S

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FSS275 Summary of contents

Page 1

... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FSS275 SANYO Semiconductors Symbol Conditions ...

Page 2

... IT12181 Ratings min typ max 1100 110 3.1 3.7 0.82 1 =30V =3A 10V R L =10Ω OUT D PW=10µs D.C.≤1% G P.G 50Ω FSS275 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage No. A0732-2/4 Unit 3.5 4.0 IT12182 ...

Page 3

... Drain Current =30V Total Gate Charge FSS275 100 Ta=25° = --60 --40 IT12183 =10V 1 ...

Page 4

... Ambient Temperature °C Note on usage : Since the FSS275 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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